Article 9416

Title of the article

INVESTIGATION OF QUALITY AND RELIABILITY OF THIN FERROELECTRIC FILMS ON SILICON SUBSTRATE 

Authors

Voronov Sergey Aleksandrovich, doctor of technical sciences, professor, head of sub-department of applied physics, Kiev Polytechnic Institute, National Technical University of Ukraine (03056, 37 Pobedy avenue, Kiev, Ukraine), s.voronov@kpi.ua
Gordiyko Nataliya Aleksandrovna, candidate of technical sciences, associate professor, sub-department of applied physics, Kiev Polytechnic Institute, National Technical University of Ukraine (03056, 37 Pobedy avenue, Kiev, Ukraine), nataly-gor2@yandex.ua
Bogorosh Aleksandr Terent'evich, doctor of technical sciences, professor, sub-department of applied physics, Kiev Polytechnic Institute, National Technical University of Ukraine (03056, 37 Pobedy avenue, Kiev, Ukraine), bogoroshа@mail.ru
Shayko-Shaykovskiy Aleksandr Gennadievich, doctor of technical sciences, professor, sub-department of professional and technological education and general physics, Chernovitsky National University named after Yuriy Fed'kovich (58012, 2 Kotsyubinskiy street, Chernovtsy, Ukraine), shayko@bk.ru

Index UDK

621.315.61

DOI

10.21685/2307-4205-2016-4-9

Abstract

Obtained and studied ferroelectric ( FE ) PbTiO3 film , inflicted on the wheels of the singlecrystal silicon Si ( 100 ) . X-ray diffraction and electron microscopy studies have shown that the investigated films are characterized by a limited texture with a perovskite structure . The possibility of using the obtained film as a non-volatile recording media overwrite media

Key words

ferroelectric , single-crystal film , memory, storage media

Download PDF

 

Дата создания: 26.05.2017 09:49
Дата обновления: 31.05.2017 15:12